FCP190N65F - Fairchild/ON Semiconductor

Part Number	FCP190N65F
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	20.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3225pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Rds On (Max) @ Id, Vgs	190 mOhm @ 10A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Weight	-
Country of Origin	-

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