FCP190N65F

FCP190N65F - Fairchild/ON Semiconductor

Part Number
FCP190N65F
Manufacturer
Fairchild/ON Semiconductor
Brief Description
MOSFET N-CH 650V 20.6A TO220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
FCP190N65F PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
1155 pcs
Reference Price
USD 3.7/pcs
Our Price
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FCP190N65F Detailed Description

Part Number FCP190N65F
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 20.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3225pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Rds On (Max) @ Id, Vgs 190 mOhm @ 10A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Weight -
Country of Origin -

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