• English
      Language Translation
    • English
    • Deutschl
    • Italia
    • France
    • España
    • 대한민국
    • 日本语
    • русский
Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays › EPC2103ENGRT
EPC2103ENGRT

EPC2103ENGRT - EPC

Part Number
EPC2103ENGRT
Manufacturer
EPC
Brief Description
TRANS GAN SYM HALF BRDG 80V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
EPC2103ENGRT PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
16250 pcs
Reference Price
USD 9.0915/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for EPC2103ENGRT

EPC2103ENGRT Detailed Description

Part Number EPC2103ENGRT
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 23A
Rds On (Max) @ Id, Vgs 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 40V
Power - Max -
Operating Temperature -
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Weight -
Country of Origin -

RELATED PRODUCTS FOR EPC2103ENGRT

Image Part Number Manufacturers Description View
EPC2001 EPC2001 EPC TRANS GAN 100V 25A BUMPED DIE Details
EPC2001C EPC2001C EPC TRANS GAN 100V 36A BUMPED DIE Details
EPC2007 EPC2007 EPC TRANS GAN 100V 6A BUMPED DIE Details
EPC2007C EPC2007C EPC TRANS GAN 100V 6A BUMPED DIE Details
EPC2010 EPC2010 EPC TRANS GAN 200V 12A BUMPED DIE Details
EPC2010C EPC2010C EPC TRANS GAN 200V 22A BUMPED DIE Details
EPC2010CENGR EPC2010CENGR EPC TRANS GAN 200V 22A BUMPED DIE Details
EPC2012 EPC2012 EPC TRANS GAN 200V 3A BUMPED DIE Details
EPC2012C EPC2012C EPC TRANS GAN 200V 5A BUMPED DIE Details
EPC2012CENGR EPC2012CENGR EPC TRANS GAN 200V 5A BUMPED DIE Details