EPC2012CENGR Detailed Description
| Part Number |
EPC2012CENGR |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) |
200V |
| Current - Continuous Drain (Id) @ 25°C |
5A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) |
5V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
1nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 100V |
| Vgs (Max) |
+6V, -4V |
| FET Feature |
- |
| Power Dissipation (Max) |
- |
| Rds On (Max) @ Id, Vgs |
100 mOhm @ 3A, 5V |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
Die Outline (4-Solder Bar) |
| Package / Case |
Die |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR EPC2012CENGR
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