ZXMN2F30FHQTA - Diodes Incorporated

Part Number	ZXMN2F30FHQTA
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.9A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	452pF @ 10V
Vgs (Max)	±12V
FET Feature	-
Power Dissipation (Max)	1.4W
Rds On (Max) @ Id, Vgs	45 mOhm @ 2.5A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

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