DMT6004SCT - Diodes Incorporated

Part Number	DMT6004SCT
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4556pF @ 30V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs	3.65 mOhm @ 100A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMT6002LPS-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V POWERDI506	Details
DMT6004LPS-13	Diodes Incorporated	MOSFET N-CH 60V 22A	Details
DMT6004SCT	Diodes Incorporated	MOSFET N-CH 60V 100A TO220-3	Details
DMT6004SPS-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V POWERDI506	Details
DMT6005LCT	Diodes Incorporated	MOSFET NCH 60V 100A TO220AB	Details
DMT6005LFG-13	Diodes Incorporated	MOSFET BVDSS 41V-60V POWERDI333	Details
DMT6005LFG-7	Diodes Incorporated	MOSFET BVDSS 41V-60V POWERDI333	Details
DMT6005LPS-13	Diodes Incorporated	MOSFET N-CHA 60V 17.9A POWERDI	Details
DMT6005LSS-13	Diodes Incorporated	MOSFET N-CHA 60V 13.5A SO8	Details
DMT6007LFG-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V POWERDI333	Details