| Part Number | DMT10H017LPD-13 |
|---|---|
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 54.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 17.4 mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 28.6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1986pF @ 50V |
| Power - Max | 2.2W (Ta), 78W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PowerDI5060-8 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
DMT10H009LSS-13 | Diodes Incorporated | MOSFET BVDSS 61V-100V SO-8 TR | Details |
|
DMT10H009SSS-13 | Diodes Incorporated | MOSFET BVDSS 61V-100V SO-8 TR | Details |
 |
DMT10H010LCT | Diodes Incorporated | MOSFET N-CH 100V TO220AB | Details |
 |
DMT10H010LK3-13 | Diodes Incorporated | MOSFET N-CH 100V 68.8A TO252-3 | Details |
 |
DMT10H010LPS-13 | Diodes Incorporated | MOSFET N-CH 100V 9.4A | Details |
 |
DMT10H010LSS-13 | Diodes Incorporated | MOSFET N-CH 100V SO-8 | Details |
 |
DMT10H010SPS-13 | Diodes Incorporated | MOSFETN-CH 100VPOWERDI5060-8 | Details |
|
DMT10H014LSS-13 | Diodes Incorporated | MOSFET NCH 100V 8.9A 8SO | Details |
|
DMT10H015LCG-13 | Diodes Incorporated | MOSFET NCH 100V 9.4A 8VDFN | Details |
|
DMT10H015LCG-7 | Diodes Incorporated | MOSFET NCH 100V 9.4A 8VDFN | Details |
