| Part Number | DMT10H010SPS-13 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 10.7A (Ta), 113A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 56.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4.468nF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerDI5060-8 |
| Package / Case | 8-PowerTDFN |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
DMT10H009LSS-13 | Diodes Incorporated | MOSFET BVDSS 61V-100V SO-8 TR | Details |
|
DMT10H009SSS-13 | Diodes Incorporated | MOSFET BVDSS 61V-100V SO-8 TR | Details |
 |
DMT10H010LCT | Diodes Incorporated | MOSFET N-CH 100V TO220AB | Details |
 |
DMT10H010LK3-13 | Diodes Incorporated | MOSFET N-CH 100V 68.8A TO252-3 | Details |
 |
DMT10H010LPS-13 | Diodes Incorporated | MOSFET N-CH 100V 9.4A | Details |
 |
DMT10H010LSS-13 | Diodes Incorporated | MOSFET N-CH 100V SO-8 | Details |
|
DMT10H010SPS-13 | Diodes Incorporated | MOSFETN-CH 100VPOWERDI5060-8 | Details |
|
DMT10H014LSS-13 | Diodes Incorporated | MOSFET NCH 100V 8.9A 8SO | Details |
|
DMT10H015LCG-13 | Diodes Incorporated | MOSFET NCH 100V 9.4A 8VDFN | Details |
|
DMT10H015LCG-7 | Diodes Incorporated | MOSFET NCH 100V 9.4A 8VDFN | Details |
