DMT10H015LCG-13

DMT10H015LCG-13 - Diodes Incorporated

Part Number
DMT10H015LCG-13
Manufacturer
Diodes Incorporated
Brief Description
MOSFET NCH 100V 9.4A 8VDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DMT10H015LCG-13 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
60173 pcs
Reference Price
USD 0.4347/pcs
Our Price
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DMT10H015LCG-13 Detailed Description

Part Number DMT10H015LCG-13
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 34A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1871pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 15 mOhm @ 20A, 10V
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Surface Mount
Supplier Device Package V-DFN3333-8
Package / Case 8-VDFN Exposed Pad
Weight -
Country of Origin -

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