DMN3730UFB4-7B - Diodes Incorporated

Part Number	DMN3730UFB4-7B
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	460 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.6nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	64.3pF @ 25V
FET Feature	-
Power Dissipation (Max)	470mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN1006-3
Package / Case	3-XFDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMN3730U-7	Diodes Incorporated	MOSFET N-CH 30V 750MA SOT23	Details
DMN3730UFB-7	Diodes Incorporated	MOSFET N-CH 30V 750MA DFN	Details
DMN3730UFB4-7	Diodes Incorporated	MOSFET N-CH 30V 750MA DFN	Details
DMN3730UFB4-7B	Diodes Incorporated	MOSFET BVDSS 25V-30V X1-DFN1006	Details