DMN3110LCP3-7

DMN3110LCP3-7 - Diodes Incorporated

Part Number
DMN3110LCP3-7
Manufacturer
Diodes Incorporated
Brief Description
MOSFET BVDSS: 25V 30V X2-DSN1006
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DMN3110LCP3-7 PDF online browsing
Datasheet PDF Download
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
158911 pcs
Reference Price
USD 0.1672/pcs
Our Price
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DMN3110LCP3-7 Detailed Description

Part Number DMN3110LCP3-7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 8V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 15V
Vgs (Max) 12V
FET Feature -
Power Dissipation (Max) 1.38W
Rds On (Max) @ Id, Vgs 69 mOhm @ 500mA, 8V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package X2-DFN1006-3
Package / Case 3-XFDFN
Weight -
Country of Origin -

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