DMN2450UFB4-7R - Diodes Incorporated

Part Number	DMN2450UFB4-7R
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	400 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.3nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	56pF @ 16V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN1006-3
Package / Case	3-XFDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMN2400UFB-7	Diodes Incorporated	MOSFET N-CH 20V 750MA 3DFN	Details
DMN2400UFB4-7	Diodes Incorporated	MOSFET N-CH 20V 750MA DFN1006H4	Details
DMN2400UFD-7	Diodes Incorporated	MOSFET N-CH 20V 0.9A DFN1212-3	Details
DMN2400UFDQ-13	Diodes Incorporated	MOSFET N-CH 20V 0.9A DFN1212-3	Details
DMN2400UFDQ-7	Diodes Incorporated	MOSFET N-CH 20V 0.9A DFN1212-3	Details
DMN2400UV-7	Diodes Incorporated	MOSFET 2N-CH 20V 1.33A SOT563	Details
DMN2450UFB4-7B	Diodes Incorporated	MOSFET BVDSS 8V-24V X2-DFN1006-	Details
DMN2450UFB4-7R	Diodes Incorporated	MOSFET BVDSS 8V-24V X2-DFN1006-	Details
DMN2450UFD-7	Diodes Incorporated	MOSFETN-CHAN 20V X1-DFN1212-3	Details
DMN24H11DS-7	Diodes Incorporated	MOSFET BVDSS 101V-250V SOT23 T	Details