Part Number | C3M0065090J |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 15V |
Vgs(th) (Max) @ Id | 2.1V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 600V |
Vgs (Max) | +19V, -8V |
FET Feature | - |
Power Dissipation (Max) | 113W (Tc) |
Rds On (Max) @ Id, Vgs | 78 mOhm @ 20A, 15V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK-7 |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Weight | - |
Country of Origin | - |