| Part Number | 2N4250 |
|---|---|
| Part Status | Last Time Buy |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 10mA, 5V |
| Power - Max | 200mW |
| Frequency - Transition | 50MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-106-3 Domed |
| Supplier Device Package | TO-106 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
2N0303 | INFINEON | 2N0303 INFINEON TO-220 New Original Stocks | Details |
|
2N03L10 | INFINEON | 2N03L10 INFINEON TO-251 New Original Stocks | Details |
|
2N1008 | EXSHINE | alloy-junction germanium transistors | Details |
|
2N1008A | EXSHINE | alloy-junction germanium transistors | Details |
|
2N1008B | EXSHINE | alloy-junction germanium transistors | Details |
|
2N1011 | EXSHINE | germanium transistors | Details |
 |
2N1016B | Microsemi Corporation | NPN TRANSISTOR | Details |
|
2N1016C | Microsemi Corporation | NPN TRANSISTOR | Details |
|
2N1016D | Microsemi Corporation | NPN TRANSISTOR | Details |
|
2N1057 | EXSHINE | alloy-junction germanium transistors | Details |
