• English
      Language Translation
    • English
    • Deutschl
    • Italia
    • France
    • España
    • 대한민국
    • 日本语
    • русский
Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - RF › NE851M33-T3-A
NE851M33-T3-A

NE851M33-T3-A - CEL

Part Number
NE851M33-T3-A
Manufacturer
CEL
Brief Description
TRANSISTOR NPN 2GHZ M33
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
NE851M33-T3-A PDF online browsing
Datasheet PDF Download
NE851M33-T3-A.pdf
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
3828 pcs
Reference Price
USD 0/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for NE851M33-T3-A

NE851M33-T3-A Detailed Description

Part Number NE851M33-T3-A
Part Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 5.5V
Frequency - Transition 4.5GHz
Noise Figure (dB Typ @ f) 1.9dB ~ 2.5dB @ 2GHz
Gain -
Power - Max 130mW
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 1V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Leads
Supplier Device Package 3-SuperMiniMold (M33)
Weight -
Country of Origin -

RELATED PRODUCTS FOR NE851M33-T3-A

Image Part Number Manufacturers Description View
NE851M03-A NE851M03-A CEL TRANSISTOR NPN 2GHZ SOT-363 Details
NE851M13-T3 NE851M13-T3 EXSHINE NECs NPN SILICON TRANSISTOR Details
NE851M13-T3-A NE851M13-T3-A CEL TRANS NPN LOW PRO M13 SMD Details
NE851M33-A NE851M33-A CEL TRANSISTOR NPN 2GHZ M33 Details
NE851M33-T3-A NE851M33-T3-A CEL TRANSISTOR NPN 2GHZ M33 Details