TP2540N3-G-P002 - Microchip Technology

Part Number	TP2540N3-G-P002
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25°C	86mA (Tj)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	125pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	740mW (Ta)
Rds On (Max) @ Id, Vgs	25 Ohm @ 100mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TP2540N3-G	Microchip Technology	MOSFET P-CH 400V 0.086A TO92-3	Details
TP2540N3-G-P002	Microchip Technology	MOSFET P-CH 400V 0.086A TO92-3	Details
TP2540N8-G	Microchip Technology	MOSFET P-CH 400V 0.125A SOT89-3	Details