AOB29S50L - Alpha & Omega Semiconductor Inc.

Part Number	AOB29S50L
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1312pF @ 100V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	357W (Tc)
Rds On (Max) @ Id, Vgs	150 mOhm @ 14.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
AOB10B60D	Alpha & Omega Semiconductor Inc.	IGBT 600V 20A 163W TO263	Details
AOB10B65M1	Alpha & Omega Semiconductor Inc.	IGBT 650V 10A TO263	Details
AOB10N60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO263	Details
AOB10T60PL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO263	Details
AOB1100L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 8A TO263	Details
AOB11C60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH TO-263	Details
AOB11C60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO263	Details
AOB11N60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO263	Details
AOB11S60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO263	Details
AOB11S65L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 11A TO263	Details