Company Profile - Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.
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GP2M023A050N | MOSFET N-CH 500V 23A TO3PN | Details |
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GP2M020A050F | MOSFET N-CH 500V 18A TO220F | Details |
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GP2M005A050HG | MOSFET N-CH 500V 4.5A TO220 | Details |
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GP2M005A050FG | MOSFET N-CH 500V 4.5A TO220F | Details |
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GP2D010A120B | DIODE SCHOTTKY 1.2KV 10A TO247-2 | Details |
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GP2D008A120C | SCHOTTKY DIODE 1200V 8A TO-252-2 | Details |
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GP2D005A120A | DIODE SCHOTTKY 1.2KV 5A TO220-2 | Details |
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GP2M004A060PG | MOSFET N-CH 600V 4A IPAK | Details |
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GP2D005A120C | DIODE SCHOTTKY 1.2KV 5A DPAK-2 | Details |
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GP2D012A060D | DIODE SCHOTTKY 600V 12A TO263-2 | Details |
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GHIS100A120S2B1 | SI IGBT & SIC SBD HYBRID MODULES | Details |
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GCMS012A120S1-E1 | SIC MOSFET/ SBD MODULE SOT-227 C | Details |
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GHIS020A060B1P2 | SI IGBT & SIC SBD HYBRID MODULES | Details |
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GHIS100A120T2C1 | SI IGBT & SIC SBD HYBRID MODULES | Details |
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GCMS008A120B1B1 | SIC MOSFET/SBD HALF BRIDGE MODUL | Details |
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GHIS100A120S1-E1 | SI IGBT/ SIC SBD HYBRID MODULE S | Details |
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GHIS050A120T1P2 | SI IGBT & SIC SBD HYBRID MODULES | Details |
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GSID150A120S3B1 | SILICON IGBT MODULES | Details |
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GHIS030A120S-A1 | IGBT BOOST CHOP 1200V 60A SOT227 | Details |
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GHIS040A120S-A1 | IGBT BOOST CHOP 1200V 80A SOT227 | Details |
