EPC

Company Profile - EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Image Part Number Description View
EPC2111ENGRT EPC2111ENGRT TRANS GAN ASYMMETRICAL HALF BRID Details
EPC2100ENGRT EPC2100ENGRT MOSFET ARRAY 2N-CH 30V DIE Details
EPC2103ENGRT EPC2103ENGRT TRANS GAN SYM HALF BRDG 80V Details
EPC2007 EPC2007 TRANS GAN 100V 6A BUMPED DIE Details
EPC2012CENGR EPC2012CENGR TRANS GAN 200V 5A BUMPED DIE Details
EPC2016 EPC2016 TRANS GAN 100V 11A BUMPED DIE Details
EPC2016C EPC2016C TRANS GAN 100V 18A BUMPED DIE Details
EPC8008ENGR EPC8008ENGR TRANS GAN 40V 2.7A BUMPED DIE Details
EPC8005ENGR EPC8005ENGR TRANS GAN 65V 2.9A BUMPED DIE Details
EPC8002ENGR EPC8002ENGR TRANS GAN 65V 2A BUMPED DIE Details
EPC8010ENGR EPC8010ENGR TRANS GAN 100V 2.7A BUMPED DIE Details
EPC8003ENGR EPC8003ENGR TRANS GAN 100V 2.5A BUMPED DIE Details
EPC2019ENG EPC2019ENG TRANS GAN 200V 8.5A BUMPED DIE Details
EPC2021ENGR EPC2021ENGR TRANS GAN 80V 60A BUMPED DIE Details
EPC2030ENGR EPC2030ENGR TRANS GAN 40V 31A BUMPED DIE Details
EPC2047ENGRT EPC2047ENGRT TRANS GAN 200V BUMPED DIE Details
EPC2010CENGR EPC2010CENGR TRANS GAN 200V 22A BUMPED DIE Details
EPC2025ENGR EPC2025ENGR TRANS GAN 300V 4A BUMPED DIE Details
EPC2024ENG EPC2024ENG TRANS GAN 40V 60A BUMPED DIE Details
EPC8007ENGR EPC8007ENGR TRANS GAN 40V 3.8A BUMPED DIE Details