Company Profile - EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
| Image | Part Number | Description | View |
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EPC2112ENGRT | 200 V GAN IC FET DRIVER | Details |
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EPC2115ENGRT | 150 V GAN IC DUAL FET DRIVER | Details |
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EPC2111 | GAN TRANS ASYMMETRICAL HALF BRID | Details |
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EPC2110 | GANFET 2NCH 120V 3.4A DIE | Details |
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EPC2101 | GAN TRANS ASYMMETRICAL HALF BRID | Details |
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EPC2102 | GAN TRANS SYMMETRICAL HALF BRIDG | Details |
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EPC2104 | GAN TRANS SYMMETRICAL HALF BRIDG | Details |
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EPC2106 | GANFET TRANS SYM 100V BUMPED DIE | Details |
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EPC2105 | GAN TRANS ASYMMETRICAL HALF BRID | Details |
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EPC2103 | GAN TRANS SYMMETRICAL HALF BRIDG | Details |
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EPC2100 | GAN TRANS ASYMMETRICAL HALF BRID | Details |
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EPC2203 | GANFET N-CH 80V 1.7A 6SOLDER BAR | Details |
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EPC2045 | GANFET TRANS 100V BUMPED DIE | Details |
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EPC2202 | GANFET N-CH 80V 18A DIE | Details |
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EPC2052 | TRANS GAN 100V DIE 16MOHM | Details |
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EPC2030 | GANFET NCH 40V 31A DIE | Details |
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EPC2206 | GANFET N-CH 80V 90A DIE | Details |
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EPC2023 | GANFET TRANS 30V 60A BUMPED DIE | Details |
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EPC2051ENGRT | GANFET TRANS 100V DIE CU PILLAR | Details |
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EPC2212 | AEC-Q101 GAN FET 100V 13.5 MOHM | Details |
