NXPSC04650Q - WeEn Semiconductors

Part Number	NXPSC04650Q
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	4A
Voltage - Forward (Vf) (Max) @ If	1.7V @ 4A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	170µA @ 650V
Capacitance @ Vr, F	130pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220AC
Operating Temperature - Junction	175°C (Max)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
NXPS20H100C,127	WeEn Semiconductors	DIODE ARRAY SCHOTTKY 100V TO220	Details
NXPS20H100CX	NXP	NXPS20H100CX NXP TO-220.. New Original Stocks	Details
NXPS20H100CX,127	WeEn Semiconductors	DIODE ARRAY SCHOTTKY 100V TO220F	Details
NXPS20H110C,127	WeEn Semiconductors	DIODE ARRAY SCHOTTKY 110V TO220	Details
NXPS20S100C,127	WeEn Semiconductors	DIODE ARRAY SCHOTTKY 100V TO220	Details
NXPS20S100CX,127	WeEn Semiconductors	DIODE ARRAY SCHOTTKY 100V TO220F	Details
NXPS20S110C,127	WeEn Semiconductors	DIODE SCHOTTKY 110V SIL3P	Details
NXPSC04650BJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 4A D2PAK	Details
NXPSC04650DJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 4A DPAK	Details
NXPSC04650Q	WeEn Semiconductors	DIODE SCHOTTKY 650V 4A TO220-2	Details