VS-EMG050J60N

VS-EMG050J60N - Vishay Semiconductor Diodes Division

Part Number
VS-EMG050J60N
Manufacturer
Vishay Semiconductor Diodes Division
Brief Description
IGBT 600V 88A 338W EMIPAK2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
VS-EMG050J60N PDF online browsing
Datasheet PDF Download
VS-EMG050J60N.pdf
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
3665 pcs
Reference Price
USD 0/pcs
Our Price
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VS-EMG050J60N Detailed Description

Part Number VS-EMG050J60N
Part Status Obsolete
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 88A
Power - Max 338W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Current - Collector Cutoff (Max) 100µA
Input Capacitance (Cies) @ Vce 9.5nF @ 30V
Input Standard
NTC Thermistor Yes
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case EMIPAK2
Supplier Device Package EMIPAK2
Weight -
Country of Origin -

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