UGB8BT-E3/81 - Vishay Semiconductor Diodes Division

Part Number	UGB8BT-E3/81
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io)	8A
Voltage - Forward (Vf) (Max) @ If	1V @ 8A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	30ns
Current - Reverse Leakage @ Vr	10µA @ 100V
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB
Operating Temperature - Junction	-55°C ~ 150°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
UGB8AT	VISHAY	Ultrafast Rectifier	Details
UGB8AT-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 8A TO263AB	Details
UGB8ATHE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 8A TO263AB	Details
UGB8ATHE3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 8A TO263AB	Details
UGB8BT	VISHAY	Ultrafast Rectifier	Details
UGB8BT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 8A TO263AB	Details
UGB8BT-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 8A TO263AB	Details
UGB8BTHE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 8A TO263AB	Details
UGB8BTHE3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 8A TO263AB	Details
UGB8CT	VISHAY	Ultrafast Rectifier	Details