SQM40081EL_GE3 - Vishay Siliconix

Part Number	SQM40081EL_GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	230nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9950pF @ 25V
FET Feature	-
Power Dissipation (Max)	107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQM40010EL_GE3	Vishay Siliconix	MOSFET N-CH 40V 120A D2PAK	Details
SQM40014EM_GE3	Vishay Siliconix	MOSFET N-CH 40V 200A TO263-7	Details
SQM40016EM_GE3	Vishay Siliconix	MOSFET N-CHAN 40V	Details
SQM40022EM_GE3	Vishay Siliconix	MOSFET N-CHAN 40V	Details
SQM40022E_GE3	Vishay Siliconix	MOSFET N-CHAN 40V	Details
SQM40031EL_GE3	Vishay Siliconix	MOSFET P-CH 40V 120A D2PAK	Details
SQM40061EL_GE3	Vishay Siliconix	MOSFET P-CHAN 40V TO-263	Details
SQM40081EL_GE3	Vishay Siliconix	MOSFET AUTO P-CHAN 40V D2PAK	Details
SQM40N10-30_GE3	Vishay Siliconix	MOSFET N-CH 100V 40A TO263	Details
SQM40N15-38_GE3	Vishay Siliconix	MOSFET N-CH 150V 40A TO263	Details