SQJ868EP-T1_GE3 - Vishay Siliconix

Part Number	SQJ868EP-T1_GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7.35 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2450pF @ 20V
FET Feature	-
Power Dissipation (Max)	48W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	SQJ860EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 60A SO8	Details
	SQJ868EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 58A POWERPAKSOL	Details