SQJ858EP-T1_GE3 Detailed Description
Part Number |
SQJ858EP-T1_GE3 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40V |
Current - Continuous Drain (Id) @ 25°C |
75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
6 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 20V |
FET Feature |
- |
Power Dissipation (Max) |
68W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PowerPAK® SO-8 |
Package / Case |
PowerPAK® SO-8 |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR SQJ858EP-T1_GE3