SQJ411EP-T1_GE3 - Vishay Siliconix

Part Number	SQJ411EP-T1_GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	9100pF @ 6V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	68W (Tc)
Rds On (Max) @ Id, Vgs	5.8 mOhm @ 15A, 4.5V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQJ410EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 30V 32A POWERPAKSO-8	Details
SQJ411EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 12V 60A SO8	Details
SQJ412EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 32A PPAK SO-8	Details
SQJ414EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 30V 30A POWERPAKSOL	Details
SQJ415EP-T1_GE3	Vishay Siliconix	MOSFET P-CHAN 40V POWERPAK SO-8L	Details
SQJ416EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 100V 27A SO8	Details
SQJ418EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 100V 48A SO8	Details