SQA410EJ-T1_GE3 - Vishay Siliconix

Part Number	SQA410EJ-T1_GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	7.8A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	485pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	13.6W (Tc)
Rds On (Max) @ Id, Vgs	28 mOhm @ 5A, 4.5V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6
Weight	-
Country of Origin	-