SQ4080EY-T1_GE3 - Vishay Siliconix

Part Number	SQ4080EY-T1_GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1590pF @ 75V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	7.1W (Tc)
Rds On (Max) @ Id, Vgs	85 mOhm @ 10A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-