SIZ998DT-T1-GE3 Detailed Description
| Part Number |
SIZ998DT-T1-GE3 |
| Part Status |
Active |
| FET Type |
2 N-Channel (Dual), Schottky |
| FET Feature |
Standard |
| Drain to Source Voltage (Vdss) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
20A (Tc), 60A (Tc) |
| Rds On (Max) @ Id, Vgs |
6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
8.1nC @ 4.5V, 19.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
930pF @ 15V, 2620pF @ 15V |
| Power - Max |
20.2W, 32.9W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerWDFN |
| Supplier Device Package |
8-PowerPair® |
| Weight |
- |
| Country of Origin |
- |
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