SIS448DN-T1-GE3 - Vishay Siliconix

Part Number	SIS448DN-T1-GE3
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1575pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs	5.6 mOhm @ 10A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SIS443DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 40V 35A PPAK 1212-8	Details
SIS444DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 35A POWERPAK1212	Details
SIS447DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 18A POWERPAK1212	Details
SIS448DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 35A 1212-8	Details