| Part Number | SIRA14DP-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 15V |
| Vgs (Max) | +20V, -16V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 31.2W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 10A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SIRA10BDP-T1-GE3 | Vishay Siliconix | MOSFET N-CHAN 30V | Details |
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SIRA10DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 60A PPAK SO-8 | Details |
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SIRA12BDP-T1-GE3 | Vishay Siliconix | MOSFET N-CHAN 30V | Details |
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SIRA12DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 25A PPAK SO-8 | Details |
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SIRA14BDP-T1-GE3 | Vishay Siliconix | MOSFET N-CHAN 30-V POWERPAK SO-8 | Details |
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SIRA14DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 58A PPAK SO-8 | Details |
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SIRA16DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V D-S PPAK SO-8 | Details |
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SIRA18ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 30.6A POWERPAKSO | Details |
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SIRA18DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 33A PPAK SO-8 | Details |
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SIRA18DP-T1-RE3 | Vishay Siliconix | MOSFET N-CH 30V 33A POWERPAKSO-8 | Details |
