SIRA01DP-T1-GE3 Detailed Description
| Part Number |
SIRA01DP-T1-GE3 |
| Part Status |
Active |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
26A (Ta), 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Rds On (Max) @ Id, Vgs |
4.9 mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
112nC @ 10V |
| Vgs (Max) |
+16V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds |
3490pF @ 15V |
| FET Feature |
- |
| Power Dissipation (Max) |
5W (Ta), 62.5W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PowerPAK® SO-8 |
| Package / Case |
PowerPAK® SO-8 |
| Weight |
- |
| Country of Origin |
- |
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