SIR664DP-T1-GE3

SIR664DP-T1-GE3 - Vishay Siliconix

Part Number
SIR664DP-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 60V 60A PPAK SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIR664DP-T1-GE3 PDF online browsing
Datasheet PDF Download
SIR664DP-T1-GE3.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
55032 pcs
Reference Price
USD 0.4819/pcs
Our Price
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SIR664DP-T1-GE3 Detailed Description

Part Number SIR664DP-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 30V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 6 mOhm @ 20A, 10V
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Weight -
Country of Origin -

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