SIR638DP-T1-RE3 - Vishay Siliconix

Part Number	SIR638DP-T1-RE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.88 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	204nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	10500pF @ 20V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SIR632DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 150V 29A SO8	Details
SIR638ADP-T1-RE3	Vishay Siliconix	MOSFET N-CH 40V 100A POWERPAKSO	Details
SIR638DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 100A PPAK SO-8	Details
SIR638DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 40V 100A POWERPAKSO	Details