SIHG21N65EF-GE3

SIHG21N65EF-GE3 - Vishay Siliconix

Part Number
SIHG21N65EF-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 650V 21A TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIHG21N65EF-GE3 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
1242 pcs
Reference Price
USD 5.63/pcs
Our Price
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SIHG21N65EF-GE3 Detailed Description

Part Number SIHG21N65EF-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2322pF @ 100V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Weight -
Country of Origin -

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