| Part Number | SIHB22N65E-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2415pF @ 100V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 227W (Tc) |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
SIHB20N50E-GE3 | Vishay Siliconix | MOSFET N-CH 500V 19A TO-263 | Details |
|
SIHB21N60EF-GE3 | Vishay Siliconix | MOSFET N-CH 600V 21A D2PAK TO263 | Details |
|
SIHB21N65EF-GE3 | Vishay Siliconix | MOSFET N-CH 650V 21A D2PAK | Details |
|
SIHB22N60AE-GE3 | Vishay Siliconix | MOSFET N-CH 600V 20A TO263 | Details |
 |
SIHB22N60AEL-GE3 | Vishay Siliconix | MOSFET N-CHAN 600V | Details |
|
SIHB22N60E-E3 | Vishay Siliconix | MOSFET N-CH 600V 21A D2PAK | Details |
|
SIHB22N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 21A D2PAK | Details |
|
SIHB22N60EL-GE3 | Vishay Siliconix | MOSFET N-CH 600V 21A TO263 | Details |
|
SIHB22N60ET1-GE3 | Vishay Siliconix | MOSFET N-CH 600V 21A TO263 | Details |
|
SIHB22N60ET5-GE3 | Vishay Siliconix | MOSFET N-CH 600V 21A TO263 | Details |
