SIHB22N65E-GE3

SIHB22N65E-GE3 - Vishay Siliconix

Part Number
SIHB22N65E-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 650V 22A D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIHB22N65E-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
75 pcs
Reference Price
USD 5.19/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for SIHB22N65E-GE3

SIHB22N65E-GE3 Detailed Description

Part Number SIHB22N65E-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2415pF @ 100V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

RELATED PRODUCTS FOR SIHB22N65E-GE3