SIE822DF-T1-GE3

SIE822DF-T1-GE3 - Vishay Siliconix

Part Number
SIE822DF-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 20V 50A POLARPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIE822DF-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
19279 pcs
Reference Price
USD 1.4108/pcs
Our Price
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SIE822DF-T1-GE3 Detailed Description

Part Number SIE822DF-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs 3.4 mOhm @ 18.3A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 10-PolarPAK® (S)
Package / Case 10-PolarPAK® (S)
Weight -
Country of Origin -

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