| Part Number | SIB410DK-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 15V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 13W (Tc) |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 3.8A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-75-6L Single |
| Package / Case | PowerPAK® SC-75-6L |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
SIB410DK-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 9A 8SO | Details |
|
SIB411DK-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 9A SC75-6 | Details |
|
SIB411DK-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 9A PPAK SC75-6L | Details |
|
SIB412DK-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 9A SC75-6 | Details |
|
SIB412DK-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 9A SC75-6 | Details |
|
SIB413DK-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 9A SC75-6 | Details |
|
SIB414DK-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 9A PPAK SC75-6 | Details |
 |
SIB415DK-T1-E3 | VISHAY | SIB415DK-T1-E3 VISHAY QFN New Original Stocks | Details |
|
SIB415DK-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 9A SC75-6 | Details |
|
SIB417AEDK-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 9A PWRPACK | Details |
