SIA923EDJ-T4-GE3 - Vishay Siliconix

Part Number	SIA923EDJ-T4-GE3
Part Status	Preliminary
FET Type	2 P-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs	54 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.9W (Ta), 7.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SIA923AEDJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC70-6L	Details
SIA923EDJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC-70-6	Details
SIA923EDJ-T4-GE3	Vishay Siliconix	MOSFET P-CH 20V SC-70-6	Details