| Part Number | SIA416DJ-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 295pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Rds On (Max) @ Id, Vgs | 83 mOhm @ 3.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 Single |
| Package / Case | PowerPAK® SC-70-6 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
SIA411DJ-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC70-6 | Details |
|
SIA411DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC70-6 | Details |
 |
SIA413ADJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 12A SC70-6 | Details |
|
SIA413DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 12A SC70-6 | Details |
 |
SIA414DJ | VISHAY | Dual N-Channel 8-V (D-S) MOSFET | Details |
|
SIA414DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 12A SC70-6 | Details |
|
SIA415DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC70-6 | Details |
|
SIA416DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 11.3A SC70-6L | Details |
|
SIA417DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 12A SC70-6 | Details |
|
SIA418DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 12A SC70-6 | Details |
