SI8457DB-T1-E1

SI8457DB-T1-E1 - Vishay Siliconix

Part Number
SI8457DB-T1-E1
Manufacturer
Vishay Siliconix
Brief Description
MOSFET P-CH 12V MICROFOOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI8457DB-T1-E1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
7500 pcs
Reference Price
USD 0.2234/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for SI8457DB-T1-E1

SI8457DB-T1-E1 Detailed Description

Part Number SI8457DB-T1-E1
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 6V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs 19 mOhm @ 3A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-MICRO FOOT® (1.6x1.6)
Package / Case 4-UFBGA, FCBGA
Weight -
Country of Origin -

RELATED PRODUCTS FOR SI8457DB-T1-E1