SI7858ADP-T1-GE3

SI7858ADP-T1-GE3 - Vishay Siliconix

Part Number
SI7858ADP-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 12V 20A PPAK SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI7858ADP-T1-GE3 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
15000 pcs
Reference Price
USD 0.9771/pcs
Our Price
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SI7858ADP-T1-GE3 Detailed Description

Part Number SI7858ADP-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 6V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1.9W (Ta)
Rds On (Max) @ Id, Vgs 2.6 mOhm @ 29A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Weight -
Country of Origin -

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