SI7842DP-T1-GE3

SI7842DP-T1-GE3 - Vishay Siliconix

Part Number
SI7842DP-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET 2N-CH 30V 6.3A PPAK SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI7842DP-T1-GE3 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
4192 pcs
Reference Price
USD 0/pcs
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SI7842DP-T1-GE3 Detailed Description

Part Number SI7842DP-T1-GE3
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.3A
Rds On (Max) @ Id, Vgs 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Weight -
Country of Origin -

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