| Part Number | SI7102DN-T1-E3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720pF @ 6V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 15A, 4.5V |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
SI7100DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 8V 35A 1212-8 | Details |
|
SI7100DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 35A PPAK 1212-8 | Details |
|
SI7101DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 35A PPAK 1212-8 | Details |
|
SI7102DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 12V 35A PPAK 1212-8 | Details |
|
SI7102DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 35A 1212-8 | Details |
|
SI7104DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 12V 35A PPAK 1212-8 | Details |
|
SI7104DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 35A PPAK 1212-8 | Details |
|
SI7106DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 12.5A 1212-8 | Details |
|
SI7106DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 12.5A 1212-8 | Details |
|
SI7107DN-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 9.8A 1212-8 | Details |
