SI6404DQ-T1-E3 - Vishay Siliconix

Part Number	SI6404DQ-T1-E3
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8.6A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 10V
Vgs(th) (Max) @ Id	600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	±12V
FET Feature	-
Power Dissipation (Max)	1.08W (Ta)
Rds On (Max) @ Id, Vgs	9 mOhm @ 11A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI6404DQ	VISHAY	N-Channel 30-V (D-S) MOSFET	Details
SI6404DQ-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 8.6A 8TSSOP	Details
SI6404DQ-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 8.6A 8TSSOP	Details
SI6405DQ	VISHAY	P-Channel 12-V (D-S) MOSFET	Details