| Part Number | SI5485DU-T1-GE3 |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 10V |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 5.9A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® ChipFet Single |
| Package / Case | PowerPAK® ChipFET™ Single |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
SI5480DU-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 12A PPAK CHIPFET | Details |
|
SI5480DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 12A PPAK CHIPFET | Details |
 |
SI5481DU | VISHAY | P-Channel 20-V (D-S) MOSFET | Details |
|
SI5481DU-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 12A PPAK CHIPFET | Details |
|
SI5481DU-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A PPAK CHIPFET | Details |
|
SI5482DU-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 12A PPAK CHIPFET | Details |
|
SI5482DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 12A PPAK CHIPFET | Details |
|
SI5484DU | VISHAY | N-Channel 20-V (D-S) MOSFET | Details |
|
SI5484DU-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 12A PPAK CHIPFET | Details |
|
SI5484DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 12A PPAK CHIPFET | Details |
