| Part Number | SI5475BDC-T1-E3 |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 6V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 6.3W (Tc) |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 5.6A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 1206-8 ChipFET™ |
| Package / Case | 8-SMD, Flat Lead |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
SI5471DC | Vishay | SI5471DC Vishay 1206-8 New Original Stocks | Details |
|
SI5471DC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 6A 1206-8 | Details |
|
SI5473DC | VISHAY | P-Channel 12-V (D-S) MOSFET | Details |
|
SI5473DC-T1 | VISHAY | P-Channel 12-V (D-S) MOSFET | Details |
|
SI5473DC-T1-E3 | Vishay Siliconix | MOSFET P-CH 12V 5.9A 1206-8 | Details |
|
SI5473DC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 5.9A 1206-8 | Details |
|
SI5475BDC-T1-E3 | Vishay Siliconix | MOSFET P-CH 12V 6A 1206-8 | Details |
|
SI5475BDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 6A 1206-8 | Details |
|
SI5475DC | VISHAY | P-Channel 12-V (D-S) MOSFET | Details |
|
SI5475DC-T1 | VISHAY | P-Channel 12-V (D-S) MOSFET | Details |
