Part Number | SI4823DY-T1-GE3 |
---|---|
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 10V |
Vgs (Max) | ±12V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 1.7W (Ta), 2.8W (Tc) |
Rds On (Max) @ Id, Vgs | 108 mOhm @ 3.3A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Weight | - |
Country of Origin | - |