SI4660DY-T1-GE3 Detailed Description
Part Number |
SI4660DY-T1-GE3 |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
25V |
Current - Continuous Drain (Id) @ 25°C |
23.1A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V, 10V |
Vgs(th) (Max) @ Id |
2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
2410pF @ 15V |
Vgs (Max) |
±16V |
FET Feature |
- |
Power Dissipation (Max) |
3.1W (Ta), 5.6W (Tc) |
Rds On (Max) @ Id, Vgs |
5.8 mOhm @ 15A, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SO |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Weight |
- |
Country of Origin |
- |
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